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| BAV99BRW switching diode features power dissipation p d: 200 mw (tamb=25 ) collector current i f: 150 ma collector-base voltage v r: 75 v operating and storage j unction temperature range t j, t stg: -55 to +150 marking:kgj electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) r i r = 2.5a 75 v reverse voltage leakage current i r v r =75v v r =20v 2.5 0.025 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv junction capacitance c j v r =0v f=1mhz 2 pf reveres recovery time t rr i f =i r =10ma i rr =0.1 i r r l =100 ? 4 ns sot-363 BAV99BRW http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
BAV99BRW http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. wej electronic co.,ltd |
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